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125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
Typical Operating Characteristics (continued)
(T A = +25°C, unless otherwise noted.)
DELAY MATCHING (DH AND DL RISING)
MAX15018 toc18
RESPONSE TO V DD GLITCH
MAX15018 toc19
10ns/div
C L = 0pF
V IN_
10V/div
V DH AND V DL
10V/div
V DH_
V DL
V DD
V IN_
40 μ s/div
10V/div
10V/div
10V/div
10V/div
Pin Description
PIN
1
2
3
4
5
6
7
8
—
NAME
V DD
BST
DH
HS
IN_H
IN_L
GND
DL
EP
FUNCTION
Input Supply Voltage. Valid supply voltage ranges from 8V to 12.6V. Bypass V DD to GND with a parallel
combination of 0.1μF and 1μF ceramic capacitors as close to the IC as possible.
Boost Flying Capacitor Connection. Connect a 0.22μF ceramic capacitor from BST to HS as close to the IC
as possible for the high-side MOSFET driver supply.
High-Side Gate Driver Output. Driver output for the high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as the return for the high-side driver.
High-Side Noninverting Logic Input
Low-Side Noninverting (MAX15018A/MAX15019A) or Low-Side Inverting (MAX15018B/MAX15019B) Input
Ground. Use GND as a return path to the DL driver output and the IN_H, IN_L inputs. Must be connected to
ground.
Low-Side Gate Driver Output. Driver output for the low-side MOSFET gate.
Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground plane to
aid in heat dissipation. Grounding EP does not substitute the requirement to connect GND to ground.
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